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PolarHVTM HiPerFET Power MOSFET
N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode
IXFK 48N60P IXFX 48N60P
VDSS ID2
RDS(on) trr
= =
600 V 48 A 135m 200 ns
Symbol VDSS VDGR VGSS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg Md Weight TL TSOLD
Test Conditions TJ = 25 C to 150 C TJ = 25 C to 150 C; RGS = 1 M Continuous Transient TC = 25 C TC = 25 C, pulse width limited by TJM TC = 25 C TC = 25 C TC = 25 C IS IDM, di/dt 100 A/s, VDD VDSS, TJ 150 C, RG = 4 TC = 25 C
Maximum Ratings 600 600 30 40 48 110 48 70 2.0 20 830 -55 ... +150 150 -55 ... +150 V V V V A A A mJ J V/ns
TO-264 (IXFK)
G D S
(TAB)
PLUS247 (IXFX)
(TAB)
W C C C G = Gate S = Source D = Drain Tab = Drain
Mounting torque (TO-264) TO-264 PLUS247 1.6 mm (0.062 in.) from case for 10 s Plastic body for 10 s
1.13/10 Nm/lb.in. 10 6 300 260 g g C C Features
l l l
Symbol Test Conditions (TJ = 25 C, unless otherwise specified) BVDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 250 A VDS = VGS, ID = 8 mA VGS = 30 VDC, VDS = 0 VDS = VDSS VGS = 0 V TJ = 125 C
Characteristic Values Min. Typ. Max. 600 3.0 5.0 200 25 1000 135 V V nA A A m
l
International standard packages Fast recovery diode Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect
Advantages
l l l
Easy to mount Space savings High power density
VGS = 10 V, ID = 0.5 ID25 Pulse test, t 300 s, duty cycle d 2 %
(c) 2006 IXYS All rights reserved
DS99375E(02/06)
IXFK 48N60P IXFX 48N60P
Symbol Test Conditions Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 35 53 8860 VGS = 0 V, VDS = 25 V, f = 1 MHz 850 60 30 VGS = 10 V, VDS = 0.5 ID25 RG = 2 (External) 25 85 22 150 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 50 50 S pF pF pF ns ns ns ns nC nC nC 0.15 C/W TO-264 and PLUS247 0.15 C/W TO-264 (IXFK) Outline
gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCs
VDS = 20 V; ID = 0.5 ID25, pulse test
Source-Drain Diode Symbol IS ISM VSD trr QRM IRM Test Conditions VGS = 0 V Repetitive
Characteristic Values (TJ = 25 C, unless otherwise specified) Min. Typ. Max. 48 110 1.5 200 0.8 6.0 A A V ns C A PLUS 247TM (IXFX) Outline
IF = IS, VGS = 0 V, Pulse test, t 300 s, duty cycle d 2 % IF = 25A, -di/dt = 100 A/s VR = 100V
Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector)
Dim. A A1 A2 b b1 b2 C D E e L L1 Q R
Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83
Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190
IXYS reserves the right to change limits, test conditions, and dimensions.
IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692 6,771,478 B2
IXFK 48N60P IXFX 48N60P
Fig. 1. Output Characteristics @ 25C
50 45 40 35 VGS = 10V 8V 7V 120 100 VGS = 10V 8V
Fig. 2. Extended Output Characteristics @ 25C
I D - Amperes
I D - Amperes
30 25 20 15 10 5 0 0 1 2 3 4 5 6 5V 6V
80 60 40
7V
6V 20 5V 0 0 4 8 1 2 1 6 20 24
V D S - Volts Fig. 3. Output Characteristics @ 125C
50 45 40 VGS = 10V 7V 3.1 2.8 VGS = 10V
V D S - Volts Fig. 4. RDS(on) Norm alized to 0.5 ID25 Value vs. Junction Tem perature
I D - Amperes
35 30 25 20 15 10 5 0 0 2 4 5V 6V
R D S ( o n ) - Normalized
2.5 2.2 1.9 1.6 1.3 1 0.7 0.4 I D = 48A I D = 24A
V D S - Volts
6
8
10
12
14
-50
-25
0
25
50
75
100
125
150
TJ - Degrees Centigrade Fig. 6. Drain Current vs. Case Tem perature
50 45
Fig. 5. RDS(on) Norm alized to
3.4 3.1
0.5 ID25 Value vs. ID
VGS = 10V TJ = 125C
R D S ( o n ) - Normalized
2.8 2.5 2.2 1.9 1.6 1.3 1 0.7 0 20 40 60 80
40 35
I D - Amperes
TJ = 25C
30 25 20 15 10 5 0
100
120
140
-50
-25
0
25
50
75
100
125
150
I D - Amperes
(c) 2006 IXYS All rights reserved
TC - Degrees Centigrade
IXFK 48N60P IXFX 48N60P
Fig. 7. Input Adm ittance
80 70 60 50 40 30 20 10 0 4 4.5 5 5.5 6 6.5 7 100 90 80
Fig. 8. Transconductance
g f s - Siemens
I D - Amperes
70 60 50 40 30 20 10 0 0 10 20 30 40 50 60 70 80 90 TJ = -40C 25C 125C
TJ = 125C 25C -40C
V G S - Volts Fig. 9. Source Current vs. Source-To-Drain Voltage
160 140 120 10 9 8 7 VDS = 300V I D = 24A I G = 10mA
I D - Amperes Fig. 10. Gate Charge
I S - Amperes
VG S - Volts
TJ = 125C TJ = 25C
100 80 60 40 20 0 0.4 0.5 0.6 0.7
6 5 4 3 2 1 0
V S D - Volts
0.8
0.9
1
1.1
1.2
1.3
0
20
40
60
80
100
120
140
160
Q G - nanoCoulombs Fig. 13. Maxim um Transient Therm al Resistance
1.00
Fig. 11. Capacitance
100000 f = 1MHz
Capacitance - picoFarads
C iss
1000
C oss
R( t h ) J C - C / W
10000
0.10
100
C rss
10 0 5 10 15 20 25 30 35 40
0.01 1 10 100 1000
V D S - Volts
IXYS reserves the right to change limits, test conditions, and dimensions.
Pulse Width - milliseconds

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